quantum dot-based indistinguishable and entangled photon sources at telecom wavelengths Search Results


gaas-based inas quantum dots (qds)  (MBL Life science)
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MBL Life science gaas-based inas quantum dots (qds)
( a ) Scheme of the investigated structure with <t>InAs/InGaAs/GaAs</t> <t>QDs;</t> ( b ) optical microscope image of mesa structures with a matrix of 2 μm and 5 μm (reference) mesas and a laser spot visible on the sample surface.
Gaas Based Inas Quantum Dots (Qds), supplied by MBL Life science, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/quantum+dot-based+indistinguishable+and+entangled+photon+sources+at+telecom+wavelengths/pmc08839711-10-7-24?v=MBL+Life+science
Average 90 stars, based on 1 article reviews
gaas-based inas quantum dots (qds) - by Bioz Stars, 2026-08
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metamorphic buffer layer ingaas  (MBL Life science)
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MBL Life science metamorphic buffer layer ingaas
( a ) Scheme of the investigated structure with <t>InAs/InGaAs/GaAs</t> <t>QDs;</t> ( b ) optical microscope image of mesa structures with a matrix of 2 μm and 5 μm (reference) mesas and a laser spot visible on the sample surface.
Metamorphic Buffer Layer Ingaas, supplied by MBL Life science, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/quantum+dot-based+indistinguishable+and+entangled+photon+sources+at+telecom+wavelengths/10__1103_slash_physrevapplied__20__044009-22-40-37?v=MBL+Life+science
Average 90 stars, based on 1 article reviews
metamorphic buffer layer ingaas - by Bioz Stars, 2026-08
90/100 stars
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Image Search Results


( a ) Scheme of the investigated structure with InAs/InGaAs/GaAs QDs; ( b ) optical microscope image of mesa structures with a matrix of 2 μm and 5 μm (reference) mesas and a laser spot visible on the sample surface.

Journal: Materials

Article Title: Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

doi: 10.3390/ma15031071

Figure Lengend Snippet: ( a ) Scheme of the investigated structure with InAs/InGaAs/GaAs QDs; ( b ) optical microscope image of mesa structures with a matrix of 2 μm and 5 μm (reference) mesas and a laser spot visible on the sample surface.

Article Snippet: We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window.

Techniques: Microscopy

Emission energy (left axis, black dots) of QDs in structure E with Varshni dependence for GaAs (red, dotted line) and InAs (red, dashed line) with energy shifted to match the low-temperature QD emission, and full width at half maximum (FWHM) of the QD emission (right axis, gray fill) with respect to the temperature.

Journal: Materials

Article Title: Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

doi: 10.3390/ma15031071

Figure Lengend Snippet: Emission energy (left axis, black dots) of QDs in structure E with Varshni dependence for GaAs (red, dotted line) and InAs (red, dashed line) with energy shifted to match the low-temperature QD emission, and full width at half maximum (FWHM) of the QD emission (right axis, gray fill) with respect to the temperature.

Article Snippet: We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window.

Techniques: